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K7I643682M07 - 2Mx36 & 4Mx18 DDRII CIO b2 SRAM

K7I643682M07_5054791.PDF Datasheet


Part No.	K7I643682M07 K7I641882M
Description	2Mx36 & 4Mx18 DDRII CIO b2 SRAM
File Size	413.02K / 18 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 2Mx36 & 4Mx18 DDRII CIO b2 SRAM

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K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7	512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM GT 35C 35#16 PIN PLUG RTANG	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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IS61DDPB22M36 IS61DDPB22M36-375M3 IS61DDPB22M36-37	72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burst of 2) CIO Synchronous SRAMs	Integrated Silicon Solution, Inc
R1QLA3636CBG R1QLA3618CBG	36-Mbit DDRII SRAM 2-word Burst	Renesas Electronics Corporation
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R1QEA7236ABG R1QBA7236ABG R1QBA7218ABG R1QBA7236AB	72-Mbit DDRII SRAM 2-word Burst	Renesas Electronics Corporation
R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R	36-Mbit DDRII SRAM 2-word Burst	Renesas Electronics Corporation
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